1/ f Noise Characterization of Bilayer MoS 2 Field‐Effect Transistors on Paper with Inkjet‐Printed Contacts and hBN Dielectrics

1/f noise represents the dominant source of in low-frequency range several physical systems, including field-effect transistors. Its investigation can provide very important information on fabrication process, highlighting steps that are more prone to introduction defects. Here, bilayer MoS2 transistors paper with inkjet-printed Ag contacts and hBN dielectric is investigated. These devices promising building blocks for future low-cost, flexible, easily recyclable disposable electronics. The analysis noise, performed following Hooge's empirical approach, results a Hooge parameter ≈1–10, which comparable those reported SiO2. present indicate properties investigated stable against substrate bending mainly determined by printing dielectric, while not being sensibly affected use substrate. further development low 2D material-based flexible electronics paper.